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DIGITAL AUDIO MOSFET
PD - 97282
IRF6785MTRPBF
Key Parameters 200 VGS = 10V 85 26 3.0 V m: nC
VDS * Latest MOSFET Silicon technology * Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ applications Qg typ. * Low RDS(on) for improved efficiency * Low Qg for better THD and improved efficiency RG(int) max * Low Qrr for better THD and lower EMI * Low package stray inductance for reduced ringing and lower EMI * Can deliver up to 250W per channel into 8 Load in Half-Bridge Configuration Amplifier * Dual sided cooling compatible * Compatible with existing surface mount technologies * RoHS compliant containing no lead or bromide MZ *Lead-Free (Qualified up to 260C Reflow) Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ SX ST SH MQ MX MT MN
Features
DirectFET ISOMETRIC
MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C PD @TA = 25C PD @TA = 70C EAS IAR TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation
Max.
200 20 19 3.4 2.7 27 57 2.8 1.8 33 8.4 0.022 -40 to + 150
Units
V
A
e Power Dissipation e
Power Dissipation
W
Single Pulse Avalanche Energyd Avalanche CurrentA Linear Derating Factor Operating Junction and Storage Temperature Range
mJ A W/C C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB
ek hk Junction-to-Ambient ik Junction-to-Case jk
Junction-to-Ambient Junction-to-Ambient
Parameter
Typ.
--- 12.5 20 --- 1.4
Max.
45 --- --- 1.4 ---
Units
C/W
Junction-to-PCB Mounted
Notes through are on page 2
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1
04/18/07
IRF6785MTRPBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS RG(int) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance
Min.
200 --- --- 3.0 --- --- --- --- ---
Typ.
--- 0.22 85 --- --- --- --- --- ---
Max.
--- --- 100 5.0 20 250 100 -100 3.0
Units
V V/C m V A nA
Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 4.2A VDS = VGS, ID = 100A VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
f
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min.
8.9 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ.
--- 26 6.3 1.3 6.9 11.5 8.2 6.2 8.6 7.2 14 1500 160 31 1140 69 140
Max.
--- 36 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Units
S VDS = 100V VGS = 10V ID = 4.2A nC
Conditions
VDS = 10V, ID = 4.2A
See Fig. 6 and 17
VDD = 100V ID = 4.2A ns RG = 6.0 VGS = 10V VGS = 0V VDS = 25V pF = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 160V, = 1.0MHz VGS = 0V, VDS = 0V to 160V
f
g
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- 71 190 1.3 --- --- V ns nC --- --- 27
Min.
---
Typ.
---
Max.
19
Units
A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 4.2A, VGS = 0V TJ = 25C, IF = 4.2A, VDD = 25V di/dt = 100A/s
G S D
f
f
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.94mH, RG = 25, IAS = 8.4A. Surface mounted on 1 in. square Cu board. Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with
metalized back and with small clip heatsink. (Drain) of part.
TC measured with thermal couple mounted to top R is measured at TJ of approximately 90C.
2
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IRF6785MTRPBF
100
TOP VGS 15V 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V
100
TOP VGS 15V 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
5.5V
1
5.5V
1
60s PULSE WIDTH
Tj = 25C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 0.1 0.1 1
60s PULSE WIDTH
Tj = 150C 10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100 VDS = 25V 60s PULSE WIDTH
Fig 2. Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
ID = 4.2A VGS = 10V 2.0
10
T J = -40C T J = 25C T J = 150C
1.5
1
1.0
0.1 3 4 5 6 7 8
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
Fig 4. Normalized On-Resistance vs. Temperature
12.0 ID= 4.2A
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C gs + C gd, C ds SHORTED Crss = C gd Coss = Cds + C gd
10.0 8.0 6.0 4.0 2.0 0.0
10000
C, Capacitance (pF)
VDS= 160V VDS= 100V VDS= 40V
1000
Ciss Coss
100
Crss
10 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
QG, Total Gate Charge (nC)
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3
IRF6785MTRPBF
100 100 OPERATION IN THIS AREA LIMITED BY R DS(on)
100sec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
T J = -40C T J = 25C T J = 150C
10
10msec 1msec
1
1 T A = 25C Tj = 150C Single Pulse 0.1 0 0.1
DC
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
1
10
100
1000
Fig 7. Typical Source-Drain Diode Forward Voltage
20
VGS(th) , Gate Threshold Voltage (V)
Fig 8. Maximum Safe Operating Area
5.0
VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
15
4.5
4.0 ID = 100A
10
3.5
ID = 250A
5
3.0
0 25 50 75 100 125 150 T C , Case Temperature (C)
2.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
100
Thermal Response ( Z thJA ) C/W
Fig 10. Threshold Voltage vs. Temperature
D = 0.50 10 0.20 0.10 0.05 0.02 0.01
1
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 A 4 A
Ri (C/W)
1.2801 8.7256 21.75 13.2511
i (sec)
0.000322 0.164798 2.2576 69
0.1
1
2
3
4
Ci= i/Ri Ci= i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A
0.001 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF6785MTRPBF
RDS(on), Drain-to -Source On Resistance (m )
500 ID = 4.2A 400
RDS(on), Drain-to -Source On Resistance ( m)
200 175 150 125 100 75 Vgs = 10V 50 0 5 10 ID, Drain Current (A) 15 20 T J = 25C T J = 125C
300
200
T J = 125C
100 T J = 25C 0 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. On-Resistance vs. Drain Current
15V
150
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
125 100 75 50 25 0 25 50 75
ID TOP 0.85A 1.04A BOTTOM 8.4A
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 15a. Unclamped Inductive Test Circuit
V(BR)DSS tp
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
I AS
Fig 15b. Unclamped Inductive Waveforms
VDS VGS RG RD
90%
D.U.T.
+
VDS
- VDD
10%
10V
Pulse Width 1 s Duty Factor 0.1 %
VGS
td(on) tr td(off) tf
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Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
5
IRF6785MTRPBF
Id Vds Vgs
L
0
DUT
20K 1K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
6
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IRF6785MTRPBF
DirectFET Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
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IRF6785MTRPBF
DirectFET Outline Dimension, MZ Outline (Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC CODE A B C D E F G H J K L M R P MIN 6.25 4.80 3.85 0.35 0.68 0.68 0.93 0.63 0.28 1.13 2.53 0.616 0.020 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 0.97 0.67 0.32 1.26 2.66 0.676 0.080 0.17 IMPERIAL MAX 0.246 0.189 0.152 0.014 0.027 0.027 0.037 0.025 0.011 0.044 0.100 0.0235 0.0008 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.038 0.026 0.013 0.050 0.105 0.0274 0.0031 0.007
DirectFET Part Marking
GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE
Line above the last character of the date code indicates "Lead-Free"
8
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IRF6785MTRPBF
DirectFET Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MIN MAX MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 5.10 0.209 5.30 0.256 6.50 0.264 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6785TRPBF). For 1000 parts on 7" reel, order IRF6785TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) METRIC IMPERIAL METRIC IMPERIAL CODE MIN MAX MIN MAX MIN MAX MAX MIN A 6.9 N.C 12.992 N.C 330.0 177.77 N.C N.C B 0.75 0.795 N.C 20.2 19.06 N.C N.C N.C C 0.53 0.504 0.50 12.8 13.5 0.520 12.8 13.2 D 0.059 0.059 N.C 1.5 1.5 N.C N.C N.C E 2.31 3.937 N.C 100.0 58.72 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.47 0.488 N.C 12.4 11.9 0.567 12.01 14.4 H 0.47 0.469 N.C 11.9 11.9 0.606 12.01 15.4
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/07
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